Modeling spin transport in electrostatically-gated lateral-channel silicon devices: Role of interfacial spin relaxation
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.84.165318/fulltext
Reference28 articles.
1. Theory of the Spin Relaxation of Conduction Electrons in Silicon
2. Spin-Orbit Symmetries of Conduction Electrons in Silicon
3. Spin Resonance of Localized and Delocalized Electrons in Phosphorus-Doped Silicon between 20 and 30 °K
4. Coherent Spin Transport through a 350 Micron Thick Silicon Wafer
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2. Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+−Si source/drain regions;Physical Review B;2020-07-15
3. Electron spin and momentum lifetimes in two-dimensional Si accumulation channels: Demonstration of Schottky-barrier spin metal-oxide-semiconductor field-effect transistors at room temperature;Physical Review B;2019-04-01
4. Evidence of Pure Spin-Current Generated by Spin Pumping in Interface-Localized States in Hybrid Metal–Silicon–Metal Vertical Structures;Nano Letters;2018-11-25
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