Investigation of charge-trap memories with AlN based band engineered storage layers-Reference-Cited by-同舟云学术

Investigation of charge-trap memories with AlN based band engineered storage layers

Published:2011-04 Issue:1 Volume:58 Page:68-74
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Molas G.,Colonna J.P.,Kies R.,Belhachemi D.,Bocquet M.,Gély M.,Vidal V.,Brianceau P.,Martinez E.,Papon A.M.,Licitra C.,Vandroux L.,Ghibaudo G.,De Salvo B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

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3. Van den bosch G, Furnémont A, Zahid MB, Degraeve R, Breuil L, Cacciato A et al. Nitride engineering for improved erase performance and retention of TANOS NAND Flash memory. In: Proc. of NVSMW-ICMTD; 2008. p. 128–9.

4. Vianello E, Perniola L, Blaise P, Molas G, Colonna JP, Driussi F et al. New insight on the charge trapping mechanisms of SiN–based memory by atomistic simulations and electrical modelling. In: IEDM 2009 Tech. Dig., 4.5.

5. Chin A, Laio CC, Chen C, Chiang KC, Yu DS, Yoo WJ et al. Low voltage high speed SiO2/AlGaN/AlLaO3/TaN memory with good retention. In: IEDM 2005 Tech. Dig., p. 165–8.

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