Reverse leakage mechanism of Schottky barrier diode fabricated on homoepitaxial GaN-Reference-Cited by-同舟云学术

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Reverse leakage mechanism of Schottky barrier diode fabricated on homoepitaxial GaN

Published:2013-04 Issue: Volume:82 Page:63-66
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lei Yong,Lu Hai,Cao Dongsheng,Chen Dunjun,Zhang Rong,Zheng Youdou

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. 30-W/mm GaN HEMTs by field plate optimization;Wu;IEEE Electron Device Lett,2004

2. Schottky barrier height in homogeneity-induced deviation from near-ideal Pd/InAlN Schottky contact;Chen;IEEE Electron Device Lett,2011

3. Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates;Hsu;Appl Phys Lett,2002

4. Scanning Kelvin probe microscopy characterization of dislocations in III-nitrides grown by metalorganic chemical vapor deposition;Koley;Appl Phys Lett,2001

5. Scanning Kelvin probe microscopy of surface electronic structure in GaN grown by hydride vapor phase epitaxy;Simpkins;J Appl Phys,2002

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1. Comparative study of epitaxial growth and Ni/GaN Schottky device on patterned sapphire substrates;CrystEngComm;2024

2. Scrutinizing Current Transport Properties in Vertical GaN Schottky Junctions;Brazilian Journal of Physics;2023-12-28

3. Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure;Frontiers in Physics;2022-11-21

4. Mechanism Exploration of Enhanced Biosensing Performance for All-Carbon-Nanotube Thin-Film Transistors;2022 IEEE Nanotechnology Materials and Devices Conference (NMDC);2022-11-17

5. MIS-Based GaN Schottky Barrier Diodes: Interfacial Conditions on the Reverse and Forward Properties;IEEE Transactions on Electron Devices;2022-10

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