Scrutinizing Current Transport Properties in Vertical GaN Schottky Junctions
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
https://link.springer.com/content/pdf/10.1007/s13538-023-01405-7.pdf
Reference37 articles.
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5. J. Hsu, M. Manfra, R. Molnar, B. Heying, J. Speck, Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates. Appl. Phys. Lett. 81, 79 (2002)
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