Investigation of the non-linear input capacitance in LDMOS transistors and its contribution to IMD and phase distortion

Author:

Bengtsson O.,Vestling L.,Olsson J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. A LDMOS technology compatible with CMOS and passive components for integrated RF power amplifiers;Tan;IEEE Electron Dev Lett,2000

2. An SOI LDMOS/CMOS/BJT technology for integrated power amplifiers used in wireless transceiver applications;Kumar;IEEE Electron Dev Lett,2001

3. How to model intermodulation distortion;Maas;IEEE MTT-S Digest,1991

4. Large and small-signal IMD behavior of microwave power amplifiers;de Carvalho;IEEE Trans Microw Theory Tech,1999

5. Intermodulation Distortion Behavior in LDMOS Transistor Amplifiers;Fager;IEEE MTT-S Digest,2002

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1. Detailed total ionizing dose effects on LDMOS transistors;Microelectronics Reliability;2022-09

2. Process and performance optimization of Triple‐RESURF LDMOS with Trenched‐Gate;International Journal of RF and Microwave Computer-Aided Engineering;2021-08-10

3. Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect;Active and Passive Electronic Components;2019-07-14

4. Effect of the Dummy Gate on the Capacitance Characteristics of the LDMOSFETs;ECS Transactions;2010-11-23

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