Surface-potential-based compact modeling of dynamically depleted SOI MOSFETs-Reference-Cited by-同舟云学术

Surface-potential-based compact modeling of dynamically depleted SOI MOSFETs

Published:2010-05 Issue:5 Volume:54 Page:595-604
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Wu Weimin,Yao Wei,Gildenblat Gennady

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Su P, Fung SKH, Wyatt PW, Wan H, Chan M, Niknejad AM, et al. A unified model for partial-depletion and full-depletion SOI circuit designs: using BSIMPD as a foundation. In: Proceedings of the IEEE custom integrated circuits conference; 2003. p. 241–4.

2. Fung SKH, Zamdmer N, Oldiges PJ, Sleight J, Mocuta A, Sherony M, et al. Controlling floating-body effects for 0.13μm and 0.10μm SOI CMOS. In: IEDM technical digest; 2000. p. 231–4.

3. A continuous compact MOSFET model for fully- and partially-depleted SOI devices;Sleight;IEEE Trans Electron Dev,1998

4. Wan H, Xi X, Niknejad A, Hu C. BSIMSOI 4.0 MOSFET model. Berkeley, CA: University of California; 2005.

5. Compact modeling of junction current in dynamically depleted SOI MOSFETs;Wu;IEEE Trans Electron Dev,2008

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