FinFETs using reverse substrate layer with improved gate capacitance characteristics for subthreshold application

Author:

Wei Xing,Zhong Jian,Luo Jun,Wu Hao,Zhu Huilong,Zhao Chao,Yin Haizhou

Funder

National Basic Research Program of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Asymmetric drain spacer extension (ADSE) FinFETs for low-power and robust SRAMs;Goel;IEEE Trans Electron Dev,2011

2. Comparison of junctionless and conventional trigate transistors with Lg down to 26nm;Rios;Electron Dev Lett, IEEE,2011

3. Kehuey Wu et al. Toward 44% switching energy reduction for FinFETs with vacuum gate spacer. In: Proc. 2012 International conference on simulation of semiconductor processes and devices (SISPAD), 2012.

4. A low power fully monolithic subthreshold CMOS receiver with integrated LO generation for 2.4GHz wireless PAN application;Perumana;IEEE J Solid-State Circ,2008

5. Lee H, Mohammadi S. A 3GHz subthreshold CMOS low noise amplifier. In: Proc IEEE RFIC Symp, June 2006. p. 494–7.

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