Simulation Analysis of Hafnium-based-Oxide and Effects of Metallization on Electrical Performance of Gate-All-Around Finfet Devices
Author:
Publisher
Elsevier BV
Subject
General Earth and Planetary Sciences,General Environmental Science
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1. White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate Dielectric Stacks for High Total Doses;IEEE Transactions on Device and Materials Reliability;2023-03
2. A review on effect of various high-k dielectric materials on the performance of FinFET device;Materials Today: Proceedings;2023
3. Performance reliability of ultra-thin Si-SiO2, Si-Al2O3, Si-ZrO2 and Si-HfO2 interface in rectangular steep retrograded nano-regimes devices;Microelectronics Reliability;2019-05
4. Q-FinFET: The Next Generation FinFET;Journal of Nanoelectronics and Optoelectronics;2019-01-01
5. Analysis of interface trap charges and densities using capacitance-voltage (C-V) and conductance voltage(G-V) methods in steep retrograded Al2O3, ZrO2 and HfO2 based gate all around FinFETs;AIP Conference Proceedings;2018
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