Memory operation of Pt–SrBi2Ta2O9–Y2O3–Si field-effect transistor with damage-free selective dry etching process-Reference-Cited by-同舟云学术

Memory operation of Pt–SrBi2Ta2O9–Y2O3–Si field-effect transistor with damage-free selective dry etching process

Published:2005-03 Issue:3 Volume:49 Page:497-504
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Shim Sun Il,Kwon Young Suk,Kim Seong-Il,Kim Yong Tae,Park Jung Ho

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Choi M-K, Jeon B-G, Jang N, Min B-J, Song Y-J, Lee SY, et al. A 0.25μm 3.0V 1T1C Nonvolatile ferroelectric RAM with address transition detector (ATD) and current forcing latch sense amplifier (CFLSA) Scheme. ISSCC Digest of Technical Papers; 2002. p. 162

2. Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor;Kim;Appl Phys Lett,1997

3. Characteristics of metal/ferroelectric/insulator/semiconductor field effect transistors using a Pt/SrBi2Ta2O9/Y2O3/Si structure;Lee;Jpn J Appl Phys,1998

4. Ferroelectric DRAM (FEDRAM) FET with metal/SrBi2Ta2O9/SiN/Si gate structure;Kim;IEEE Electron Dev Lett,2002

5. Stack gate PZT/Al2O3 one transistor ferroelectric memory;Chin;IEEE Electron Dev Lett,2001

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Retention mechanism study of the ferroelectric field effect transistor;Applied Physics Letters;2011-07-04

2. Densification and dielectric properties of strontium bismuth tantalate ceramics;Advances in Applied Ceramics;2008-12

3. Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching;Applied Physics B;2007-10-21