Low frequency noise characterization and modelling in ultrathin oxide MOSFETs-Reference-Cited by-同舟云学术

Low frequency noise characterization and modelling in ultrathin oxide MOSFETs

Published:2006-01 Issue:1 Volume:50 Page:63-68
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Contaret T.,Romanjek K.,Boutchacha T.,Ghibaudo G.,Bœuf F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Noise model of gate-leakage current in ultrathin oxide MOSFETs;Lee;IEEE Trans Electron Dev,2003

2. Romanjek K. Characterization and modelling of 50nm and below CMOS transistors technologies. PhD thesis, INPG, Grenoble, France; 2004.

3. New approach for the gate current source–drain partition modeling in advanced MOSFETs;Romanjek;Solid-State Electron,2003

4. Chroboczek JA, Piantino G. Patent No. 15075, France. Registered in November 1999.

5. On the theory of carrier number fluctuations in MOS devices;Guibaudo;Solid-State Electron,1989

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