Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode-Reference-Cited by-同舟云学术

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Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode

Published:2019-01 Issue: Volume:151 Page:47-51
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Colón Albert,Douglas Erica A.,Pope Andrew J.,Klein Brianna A.,Stephenson Chad A.,Van Heukelom Michael S.,Tauke-Pedretti Anna,Baca Albert G.

Funder

U.S. Department of Energy

National Nuclear Security Administration

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Gallium nitride devices for power electronic applications;Baliga;Semicond Sci Technol,2013

2. High performance AlGaN/GaN power switch with HfO2 insulation;Shi;Appl Phys Lett,2009

3. Effects of passivation on breakdown voltage and leakage current of normally-off InAlN/GaN MISHFETs—a simulation study;Tang;Semicond Sci Technol,2014

4. Influence of acceptor-like traps in the buffer on current collapse and leakage of E-mode AlGaN/GaN MISHFETs;Tang;Semicond Sci Technol,2013

5. Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices;Coltrin;J Appl Phys,2017

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 2.5 kV/1.95 GW/cm² AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-k Field Plate to Reduce Reverse Current;IEEE Transactions on Electron Devices;2024-06

2. A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure;Chip;2023-12

3. A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications;Microelectronics Journal;2023-10

4. High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing;Small;2022-07-22

5. Ultra-wide bandgap semiconductor Ga2O3 power diodes;Nature Communications;2022-07-06

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