Effects of passivation on breakdown voltage and leakage current of normally-off InAlN/GaN MISHFETs—a simulation study
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/29/i=12/a=125004/pdf
Reference28 articles.
1. Power electronics on InAlN/(In)GaN: Prospect for a record performance
2. Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors
3. InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess
4. Schottky Source/Drain InAlN/AlN/GaN MISHEMT With Enhanced Breakdown Voltage
5. InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance;IEEE Electron Device Letters;2019-08
2. Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm2 specific on-resistance AlGaN/GaN Schottky barrier diode;Solid-State Electronics;2019-01
3. Design and simulation of a doping-less charge plasma based enhancement mode GaN MOSFET;Journal of Computational Electronics;2017-10-20
4. AlGaN/GaN MOS-HEMT Device Fabricated Using a High Quality PECVD Passivation Process;IEEE Electron Device Letters;2017-06
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