Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application

Author:

Bang Suhyun,Kim Min-Hwi,Kim Tae-Hyeon,Lee Dong Keun,Kim SungjunORCID,Cho SeongjaeORCID,Park Byung-Gook

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Resistive switching in transition metal oxides;Sawa;Mater Today,2008

2. Baek I, Kim D, Lee M, Kim H-J, Yim E, Lee M, et al. Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application. Electron devices meeting, 2005 IEDM technical digest IEEE international. IEEE; 2005. p. 750–3.

3. Low-power switching of nonvolatile resistive memory using hafnium oxide;Lee;Jpn J Appl Phys,2007

4. Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device;Kim;PCCP,2017

5. Nano-cone resistive memory for ultralow power operation;Kim;Nanotechnology.,2017

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