A new method for determination of PAD capacitances for GaAs HBTs based on scalable small signal equivalent circuit model-Reference-Cited by-同舟云学术

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A new method for determination of PAD capacitances for GaAs HBTs based on scalable small signal equivalent circuit model

Published:2018-12 Issue: Volume:150 Page:45-50
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Zhang Ao,Gao Jianjun

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. HEMT’s and HBT’s: devices, fabrication, and circuits;Ali,1991

2. Heterojunction bipolar transistor for circuit design—microwave modeling and parameter extraction;Gao,2015

3. Introduction to modeling HBTs;Rudolph,2006

4. Handbook of III-V heterojunction bipolar transistor;Liu,1998

5. Electrical and thermal characterization of MESFET, HEMTs and HBTs;Anholt,1995

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