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Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures

  • Published:2022-06 Issue: Volume:192 Page:108271
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Serra di Santa Maria F.,Contamin L.,Cassé M.,Theodorou C.,Balestra F.,Ghibaudo G.

Funder

H2020

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Low temperature electronics: physics, devices, circuits, and applications;Gutiérrez,2000

2. Device and Circuit Cryogenic Operation for Low Temperature Electronics,2001

3. Development of Low Power Cryogenic Readout Integrated Circuits Using Fully-Depleted-Silicon-on-Insulator CMOS Technology for Far-Infrared Image Sensors;Wada;J Low Temp Phys,2012

4. Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures;Incandela;IEEE J Electron Devices Soc,2018

5. Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K;Beckers;IEEE J Electron Devices Soc,2018

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extending Standard BSIM-BULK Model to Cryogenic Temperatures;IEEE Transactions on Electron Devices;2024-08

2. Nonlinear behaviors in back-gate effects of FDSOI MOSFETs at cryogenic temperatures;Semiconductor Science and Technology;2024-07-12

3. Cryogenic MOSFET Subthreshold Current: From Resistive Networks to Percolation Transport in 1-D Systems;IEEE Transactions on Electron Devices;2023-08

4. Cryogenic Characteristics of InGaAs MOSFET;IEEE Transactions on Electron Devices;2023-03

5. On the Zero Temperature Coefficient in Cryogenic FD-SOI MOSFETs;IEEE Transactions on Electron Devices;2023-03
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