Dual metal gate FinFET integration by Ta/Mo diffusion technology for Vt reduction and multi-Vt CMOS application-Reference-Cited by-同舟云学术

Dual metal gate FinFET integration by Ta/Mo diffusion technology for Vt reduction and multi-Vt CMOS application

Published:2009-07 Issue:7 Volume:53 Page:701-705
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Matsukawa Takashi,Endo Kazuhiko,Liu Yongxun,O’uchi Shinichi,Ishikawa Yuki,Yamauchi Hiromi,Tsukada Junichi,Ishii Kenichi,Sakamoto Kunihiro,Suzuki Eiichi,Masahara Meishoku

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

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4. Liu YX, Matsukawa T, Endo K, Masahara M, Ishii K, O’uchi S, et al. Advance FinFET CMOS technology: TiN-gate, Fin-height control and asymmetric gate insulator thickness 4T-FinFETs. In: IEDM tech. dig.; 2006. p. 989–92.

5. Samavedam SB, La LB, Smith J, Dakshina-Marthy S, Luckowski E, Schaeffer J, et al. Dual-metal gate CMOS with HfO2 gate dielectric. In: IEDM tech. dig.; 2002. p. 433–6.

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