Author:
Chang Wen-Teng,Lin Yu-Seng,Shih Cheng-Ting
Funder
Ministry of Science and Technology
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Experimental investigation of hole transport in strained Si1−xGex/SOI pMOSFETs – part I: scattering mechanisms in long-channel devices;Casse;IEEE Trans Electron Dev,2012
2. New opportunities for SiGe and Ge channel p-FETs;Bedell;Microelectron Eng,2011
3. PMOS hole mobility enhancement through SiGe conductive channel and highly compressive ILD-SiNx stressing layer;Liao;IEEE Electron Dev Lett,2008
4. Lindgren AC, Hellberg PE, Haartman M von, Wu D, Menon C, Zhang SL, et al. Enhanced intrinsic gain (gm/gd) of PMOSFETs with a Si0.7Ge0.3 channel. In: Eur Solid State Dev Res Conf; 2002. p. 175–8.
5. Enhanced hole transport in short-channel strained-SiGe p-MOSFETs;Gomez;IEEE Trans Electron Dev,2009
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