PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD- $\hbox{SiN}_{x}$ Stressing Layer-Reference-Cited by-同舟云学术

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PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD- $\hbox{SiN}_{x}$ Stressing Layer

Published:2008-01 Issue:1 Volume:29 Page:86-88
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Liao Wen-Shiang,Liaw Yue-Gie,Tang Mao-Chyuan,Chen Kun-Ming,Huang Sheng-Yi,Peng C.-Y.,Liu Chee Wee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4408714/04408741.pdf?arnumber=4408741

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Hybrid SiGe-Silicon 5V pLDMOS on 28nm HKMG technology;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

2. Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices;ECS Journal of Solid State Science and Technology;2019

3. Improved Technique for Extraction of Effective Mobility by Considering Gate Bias-Dependent Inversion Charges in a Floating-Body Si/SiGe pMOSFET;Journal of Nanoscience and Nanotechnology;2017-05-01

4. Threshold voltage and transconductance shifting reliance on strained-SiGe channel dimension;Solid-State Electronics;2015-08

5. Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs;International Journal of Nanotechnology;2014

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