RF performances at cryogenic temperature of inductors integrated in a FDSOI technology-Reference-Cited by-同舟云学术

RF performances at cryogenic temperature of inductors integrated in a FDSOI technology

Published:2022-08 Issue: Volume:194 Page:108285
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Berlingard Quentin,Lugo-Alvarez Jose,Contamin Lauriane,Durand Cédric,Galy Philippe,Juge Andre,De Franceschi Silvano,Vinet Maud,Meunier Tristan,Cassé Mikaël,Gaillard Fred

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Cryo-CMOS for Analog/Mixed-Signal Circuits and Systems;van Dijk,2020

2. Cryo-CMOS Electronics for Quantum Computing Applications;Charbon,2019

3. Design and fabrication of cryogenic low noise amplifier in low RF band;Li,2007

4. H. O. Gulec and M. B. Yelten, “A cryogenic LC VCO utilizing cryogenic models of active devices,” Proc. - 2019 6th Int. Conf. Electr. Electron. Eng. ICEEE 2019, pp. 220–224, 2019, 10.1109/ICEEE2019.2019.00049.

5. Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures;Patra;IEEE J Electron Devices Soc,2020

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2. RF performance of Standard, High-Resistivity and Trap-Rich Silicon substrates down to cryogenic temperature;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11