Author:
Mayer F.,Le Royer C.,Le Carval G.,Tabone C.,Clavelier L.,Deleonibus S.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
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3. 100-nm n-/p-Channel I-MOS using a novel self-aligned structure;Choi;IEEE Electron Dev Lett,2005
4. Mayer F, Le Royer C, Le Carval G, Tabone C, Clavelier L, Deleonibus S. Comparative study of the fabricated and simulated impact ionization MOS (IMOS). ULIS April 2006.
5. 70-nm Impact-ionization metal-oxide-semiconductor (I-MOS) devices integrated with tunneling field-effect transistors (TFETs);Choi;IEDM,2005
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