Author:
Sklenard Benoit,Batude Perrine,Rafhay Quentin,Martin-Bragado Ignacio,Xu Cuiqin,Previtali Bernard,Colombeau Benjamin,Khaja Fareen-Adeni,Cristoloveanu Sorin,Rivallin Pierrette,Tavernier Clement,Poiroux Thierry
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth;Pawlak;J Vac Sci Technol B: Microelectron Nanometer Struct,2004
2. Batude P, Vinet M, Previtali B, Tabone C, Xu C, Mazurier J, et al. Advances, challenges and opportunities in 3D CMOS sequential integration. In: 2011 IEEE International Electron Devices Meeting (IEDM); 2011. p. 7.3.1–4.
3. Veloso A, Ragnarsson L-A, Cho M, Devriendt K, Kellens K, Sebaai F, et al. Gate-last vs. gate-first technology for aggressively scaled EOT logic/RF CMOS. In: 2011 Symposium on VLSI technology (VLSIT); 2011. p. 34–5.
4. Groups III and V impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals;Duffy;Appl Phys Lett,2006
5. Quantitative prediction of junction leakage in bulk-technology CMOS devices;Duffy;Solid-State Electron,2010
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