Author:
Kakushima K.,Koyanagi T.,Tachi K.,Song J.,Ahmet P.,Tsutsui K.,Sugii N.,Hattori T.,Iwai H.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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5. Kakushima K, Okamoto K, Tachi K, Ahmet P, Tsutsui K, Sugii N, Hattori H, Iwai H. Futher EOT Scaling below 0.4nm for High-k Gated MOSFET. Extended abstract of 2008 international workshop on dielectric thin films for future ULSI devices: science and technology; 2008. 9–10.
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