Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks-Reference-Cited by-同舟云学术

Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

Published:2013-06 Issue: Volume:84 Page:22-27
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ritzenthaler R.,Schram T.,Bury E.,Spessot A.,Caillat C.,Srividya V.,Sebaai F.,Mitard J.,Ragnarsson L.-Å.,Groeseneken G.,Horiguchi N.,Fazan P.,Thean A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

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3. Ortolland C, et al. Ion-implantation-based low-cost Hk/MG process for CMOS low-power application. In: 2010 Symposium on VLSI Technology Technical Digest; 2010: vol. 95. p. 185–6.

4. Mistry K, et al. A 45nm logic technology with high-k+metal gate transistors, strained silicon, 9 Cu interconnect layers, 193nm dry patterning, and 100% Pb-free packaging. In: 2007 IEEE International Electron Devices Meeting; 2007. p. 247–50.

5. Boccardi G, et al. RMG technology integration in FinFET devices. In: Proceedings of International Conference on Solid State Devices and Materials (SSDM); 2012.

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