Ion-implantation-based low-cost Hk/MG process for CMOS low-power application-Reference-Cited by-同舟云学术

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Ion-implantation-based low-cost Hk/MG process for CMOS low-power application

Published:2010-06 Issue: Volume: Page:
ISSN:
Container-title:2010 Symposium on VLSI Technology
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Author:

Ortolland C.,Sahhaf S.,Srividya V.,Degraeve R.,Saino K.,Kim C.S.,Gilbert M.,Kauerauf T.,Cho M.J.,Dehan M.,Schram T.,Togo M.,Horiguchi N.,Groeseneken G.,Biesemans S.,Absil P.P.,Vandervorst W.,Gealy D.,Hoffmann T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5548927/5556114/05556221.pdf?arnumber=5556221

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Measurement and Simulation of Ultra-Low-Energy Ion–Solid Interaction Dynamics;Micromachines;2023-09-30

2. Diffusion and Gate Replacement: A New Gate-First High- $k$ /Metal Gate CMOS Integration Scheme Suppressing Gate Height Asymmetry;IEEE Transactions on Electron Devices;2016-01

3. Low-frequency noise assessment of border traps in Al2O3 capped DRAM peripheral MOSFETs;Semiconductor Science and Technology;2014-09-15

4. A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond;IEEE Transactions on Electron Devices;2014-08

5. Accurate Prediction of Device Performance Based on 2-D Carrier Profiles in the Presence of Extensive Mobile Carrier Diffusion;IEEE Transactions on Electron Devices;2014-08

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