Author:
Momose Hisayo Sasaki,Nakamura Shin-ichi,Katsumata Yasuhiro,Iwai Hiroshi
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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3. 1.5nm direct-tunneling gate oxide Si MOSFETs;Momose;IEEE Trans Electron Dev,1996
4. Momose HS, Morifuji E, Yoshitomi T, Ohguro T, Saito M, Morimoto T, Katsumata Y, Iwai H. High-frequency AC characteristics of 1.5nm gate oxide MOSFETs. IEDM Tech Dig 1996:105–8.
5. Momose HS, Nakamura S, Ohguro T, Yoshitomi T, Morifuji E, Morimoto T, Katsumata Y, Iwai H. Uniformity and reliability of 1.5 nm direct tunneling gate oxide MOSFETs. Dig Tech Pap, VLSI Symp on Technol, Kyoto, 1997:15–16
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