Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETs-Reference-Cited by-同舟云学术

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Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETs

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Container-title:Proceedings of 1994 IEEE International Electron Devices Meeting
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Author:

Momose H.S.,Ono M.,Yoshitomi T.,Ohguro T.,Nakamura S.,Saito M.,Iwai H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/3058/8678/00383340.pdf?arnumber=383340

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