Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications-Reference-Cited by-同舟云学术

Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications

Published:1998-06 Issue:6-8 Volume:38 Page:1353-1359
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Hamidi A.,Coquery G.,Lallemand R.,Vales P.,Dorkel J.M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. A review of thermal characterization of power transistors;Blackburn,1986

2. 3D Thermal modeling based on the two-port network theory for hybrid or monolithic integrated power circuits;Dorkel;IEEE Trans. Components, Packaging and Manufacturing Technology,1996

3. Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions;Hamidi;ESREF,1997

4. Reliability of high power IGBT modules - Testing on thermal fatigue effects due to traction cycles;Hamidi;EPE,1997

5. Reliability testing and analysis of IGBT power semiconductor modules;Jacob,1995

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