Research on Electro-thermal Model Simulation of IGBT Switching Transient

Abstract

Abstract The electro-thermal model of Insulated Gate Bipolar Transistor(IGBT) can be used to simulate the operating characteristics of devices at different temperatures. Considering the relationship between internal parameters, semiconductor physical constants and temperature, the electrical model of IGBT at a single temperature is extended to an electro-thermal model which can reflect the working characteristics at different temperatures. This model takes into account both simulation accuracy and simulation speed. Finally, the IGB model is selected, and the IGBT switching transient at different temperatures is verified by experiments.