Author:
Sozzi Giovanna,Menozzi Roberto
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Roesch W. Volume and quality impacts on reliability: a new game for GaAs. Proc GaAs Reliab Workshop, Seattle, WA, November 2000. p. 137–45
2. Reliability physics of compound semiconductor transistors for microwave applications;Borgarino;Microelectron Reliab,2001
3. These figures can be found in the TriQuint website: www.triquint.com
4. ATLAS/BLAZE Device Simulation Software, SILVACO International
5. Watanabe A, Fujimoto K, Oda M, Nakatsuka T, Tamura A. Rapid degradation of WSi self-aligned gate GaAs MESFET by hot carrier effect. IEEE Int Reliab Phys Proc, 1992. p. 127–30
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