Author:
Scorzoni A.,Impronta M.,De Munari I.,Fantini F.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Electromigration failure modes in aluminum metallization for semiconductor devices;Black;Proc. IEEE,1969
2. A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2;Shatzkes;J. Appl. Phys,1986
3. Standard Test Method for Estimating Electromigration Median Time-To-Failure and Sigma of Integrated Circuit Metallizations. American Society for Testing and Materials, F1260-89
4. The isocurrent test: a promising tool for wafer-level evaluation of the interconnect reliability;Witvrouw;Microelectron. Reliab,1996
5. Isothermal Electromigration Test Procedure. EIA/JESD61 (JEDEC Standard No.61), April 1997
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献