The isocurrent test: A promising tool for wafer-level evaluation of the interconnect reliability-Reference-Cited by-同舟云学术

The isocurrent test: A promising tool for wafer-level evaluation of the interconnect reliability

Published:1996-11 Issue:11-12 Volume:36 Page:1847-1850
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Witvrouw A.,van Dooren S.,Wouters D.,van Dievel M.,Maex K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Quick Tests for Electromigration: Useful, but not without Danger;Lloyd,1992

2. The Use of Early resistance and Early TCR Changes to Predict Reliability on On-Chip Interconnects;D'Haeger,1993

3. Reliability Issues in Multilevel Interconnect;Bonifield;VMIC tutorial 1992,1992

4. Characterization of two Electromigration Failure Modes in Submicron VLSI;Atakov,1993

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1. Time-Zero Failure Current Measurement for Early Monitoring of Defective Metal Lines at Wafer Level;Journal of The Electrochemical Society;2003

2. Spectroscopic identification of light emitted from defects in silicon devices;Journal of Applied Physics;2001-01

3. Effect of oxide and W-CMP on the material properties and electromigration behaviour of layered aluminum metallisations;Microelectronic Engineering;2000-01

4. Fabrication and reliability testing of Ti/TiN heaters;SPIE Proceedings;1999-08-30

5. A proposal for a standard procedure for moderately accelerated electromigration tests on metal lines;Microelectronics Reliability;1999-05