Investigation of defect on copper bond pad surface in copper/low k process integration-Reference-Cited by-同舟云学术

Investigation of defect on copper bond pad surface in copper/low k process integration

Published:2003-08 Issue:8 Volume:43 Page:1311-1316
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Zheng Y.S.,Su Y.J.,Yu B.,Foo P.D.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Polymer residue chemical composition and its effect on via contact resistance in dual damascene copper interconnects process integration;Zheng;Microelectron. J.,2003

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3. Trends in structural defect analysis;Teshima;Semicond. Int.,2001

4. Estimating the impact of defects on yield from in-line defect measurement data;Riley;IEEE Semicond. Manuf.,1999

5. Wirebonding to multilevel metal;O’Neill;Solid State Technol.,1997

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5. Investigation of surface roughening of low-k films during etching using fluorocarbon plasma beams;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006