Integrated barrier/plug fill schemes for high aspect ratio Gb DRAM contact metallization-Reference-Cited by-同舟云学术

Integrated barrier/plug fill schemes for high aspect ratio Gb DRAM contact metallization

Published:1998-05 Issue:1 Volume:320 Page:73-76
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Chen Yu-Pei,Dixit Girish A,Lu Jiong-Ping,Hsu Wei-Yung,Konecni Anthony J,Luttmer J.D,Havemann Robert H

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. J.P. Lu, W.Y. Hsu, Q.Z. Hong, G.A. Dixit, J.D. Luttmer, R.H. Havemann, L.K. Magel, Advanced Metallization for ULSI Applications in 1996, Materials Research Society Conference Proceedings, 1996, p. 269.

2. C. Arena, J. Faguet, R.F. Foster, J.T. Hillman, F. Martin, Y. Morand, Advanced Metallization for ULSI Applications in 1994, Materials Research Society Conference Proceedings, 1994, p. 259.

3. M.S. Ameen, J.T. Hillman, J. Fauget, R.F. Foster, C. Arena, F. Martin, Advanced Metallization for ULSI Applications in 1994, Materials Research Society Conference Proceedings, 1994, p. 269.

4. G.A. Dixit, W.Y. Hsu, A.J. Konecni, S.Krishnan, J.D. Luttmer, R.H. Havemann, J. Forster, G.D. Yao, M. Narasimhan, Z. Xu, S. Ramaswami, F.S. Chen, J. Nulman, IEDM, 1996, p. 357.

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