Nanostructures in silicon devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Growth and characterization of a delta‐function doping layer in Si
2. p‐type delta‐doped layers in silicon: Structural and electronic properties
3. Science and Engineering of One- and Zero-Dimensional Semiconductors;Beaumont,1990
4. Silicon nanostructure devices
5. Silicon-germanium molecular beam epitaxy system for high-quality nanostructures and devices
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1. Formation of Fe nanowires on Cu(1 0 0) vicinal surfaces;Results in Physics;2019-12
2. Kinetic Monte Carlo simulation of Ni nanowires on Cu(1 0 0) stepped surfaces;Results in Physics;2019-03
3. Gate-controlled diode structure based electro-optical interfaces in standard silicon-CMOS integrated circuitry;Applied Optics;2015-07-15
4. Quantum efficiency of SiGe LEDs;Semiconductor Science and Technology;2003-04-10
5. Ion-beam-assisted MBE growth of semi-spherical SiGe/Si nano-structures;Applied Physics A: Materials Science & Processing;2001-12-01
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