Gate-controlled diode structure based electro-optical interfaces in standard silicon-CMOS integrated circuitry-Reference-Cited by-同舟云学术

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Gate-controlled diode structure based electro-optical interfaces in standard silicon-CMOS integrated circuitry

Published:2015-07-15 Issue:21 Volume:54 Page:6420
ISSN:0003-6935
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Xu Kaikai,Liu Haitao,Zhang Zhengyuan

Funder

Chinese Fundamental Research Funds for the Central Universities

Open Funding of the Science and Technology on Analog Integrated Circuits Laboratory

Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education, China

Tianfu Foundation

Publisher

The Optical Society

Reference25 articles.

1. Single-Wavelength Silicon Evanescent Lasers

2. Design and fabrication of integrated Si-based optoelectronic devices

3. Nanostructures in silicon devices

4. Silicon-based light emission after ion implantation

5. Enhanced emission from Si-based light-emitting diodes using surface plasmons

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1. Hot carrier degradation of mixed-mode polysilicon light emitting diodes;Materials Science and Engineering: B;2023-06

2. Realization of GHz band integrated optical links in a radio frequency Si Ge bipolar process operating at 650 to 850 nm wavelength;Optical Engineering;2022-12-28

3. Micron and Nano-Dimensioned Silicon LEDs Emitting at 650 and 750-850 nm Wavelengths in Standard Si Integrated Circuitry;IEEE Journal of Quantum Electronics;2020-08

4. Analysis of electroluminescence spectra from high optical-power density forward-biased silicon-led in standard CMOS technology;Optik;2020-04

5. Poly-silicon light-emitting-device based electro-optical interfaces in standard silicon-CMOS integrated circuitry;Optical Materials;2020-04

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