Physical model and numerical results of dissociation kinetics of hydrogen-passivated Si/SiO2 interface defects
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. The Physics and Chemistry of SiO2 and the SiO2 Interface 2;Saks,1993
2. The effect of hydrogen on trap generation, positive charge trapping, and time-dependent dielectric breakdown of gate oxides
3. Chemical kinetics of hydrogen and (111) Si‐SiO2interface defects
4. Hydrogen model for radiation-induced interface states in SiO2-on-Si Structures: A review of the evidence
5. Atomic hydrogen reactions withPbcenters at the (100) Si/SiO2interface
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1. Controlled cooling process for efficient hydrogenation;Journal of Alloys and Compounds;2017-03
2. Simulation of hydrogen diffusion and boron passivation in crystalline silicon;Modelling and Simulation in Materials Science and Engineering;2014-02-28
3. Interstitial diffusion under conditions of trapping of interstitial impurity atoms;Materials Science in Semiconductor Processing;2010-02
4. Ionization and shielding of interface states in native p+-Si/SiO2 probed by electric field induced second harmonic generation;Journal of Applied Physics;2008-10-15
5. Electron states at the Si-SiO2 boundary (Review);Semiconductor physics, quantum electronics and optoelectronics;2005-12-15
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