Electronic properties of MOS capacitor exposed to inductively coupled hydrogen plasma-Reference-Cited by-同舟云学术

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Electronic properties of MOS capacitor exposed to inductively coupled hydrogen plasma

Published:1999-05 Issue:1 Volume:345 Page:172-177
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ikeda A.,Sadou T.,Nagashima H.,Kouno K.,Yoshikawa N.,Tshukamoto K.,Kuroki Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Characterization and removal of silicon surface residue resulting from CHF3/C2F6reactive ion etching

2. K. Takagi, et al., Proc. 9th Symp. Plasma Processing, (1995) 433.

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of hydrogen plasma treatment on charge storage characteristics in high density tungsten nanocrystal nonvolatile memory;Thin Solid Films;2011-03

2. Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments;Thin Solid Films;2010-10

3. Investigation of the surface chemical and electronic states of pyridine-capped CdSe nanocrystal films after plasma treatments using H2, O2, and Ar gases;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-07

4. Hydrogen passivation of interfacial gap state defects at UHV-prepared ultrathin SiO2 layers on Si(111), Si(110), and Si(100);Physica E: Low-dimensional Systems and Nanostructures;2009-05

5. Modification of the Mechanical Properties of SiO2Thin Film Using Plasma Treatments for Micro-Electro-Mechanical Systems Applications;Japanese Journal of Applied Physics;2008-06-20

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