Hydrogen passivation of interfacial gap state defects at UHV-prepared ultrathin SiO2 layers on Si(111), Si(110), and Si(100)-Reference-Cited by-同舟云学术

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Hydrogen passivation of interfacial gap state defects at UHV-prepared ultrathin SiO2 layers on Si(111), Si(110), and Si(100)

Published:2009-05 Issue:6 Volume:41 Page:1019-1024
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Stegemann Bert,Schoepke Andreas,Sixtensson Daniel,Gorka Benjamin,Lussky Thomas,Schmidt Manfred

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Teaching silicon new tricks

2. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

3. Quantum confinement and light emission in SiO2/Si superlattices

4. Light amplification in silicon nanocrystals by pump and probe transmission measurements

5. Silica-on-Silicon Waveguide Quantum Circuits

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1. How flat is the flatband potential?;Journal of Materials Chemistry A;2023

2. A Critical Review of Current Studies on Hydrogen Defect in Diluted Magnetic Semiconductors and Relative Ferroelectric Materials for Smart Electronic Applications;Journal of Superconductivity and Novel Magnetism;2022-09-30

3. Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning;physica status solidi (a);2019-11-08

4. Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO 2 /Si interfaces with low defect densities;Applied Surface Science;2017-02

5. Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation;Applied Surface Science;2015-10

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