Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation-Reference-Cited by-同舟云学术

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Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Published:2015-10 Issue: Volume:353 Page:1269-1276
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Gad Karim M.,Vössing Daniel,Balamou Patrice,Hiller Daniel,Stegemann Bert,Angermann Heike,Kasemann Martin

Funder

Wissenschaftliche Gesellschaft in Freiburg im Breisgau

HTW Berlin

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference57 articles.

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2. Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory;Green;Solid State Electron.,1974

3. MIS solar cell—general theory and new experimental results for silicon;Green;Appl. Phys. Lett.,1976

4. 17.1% efficient truncated-pyramid inversion-layer silicon solar cells;Grauvogl,1996

5. Passivation properties of subnanometer thin interfacial silicon oxide films;Lu;Energy Procedia,2014

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