Study of electrical and interfacial properties of CVD-W/p-Si0.83Ge0.17/Si(001)-Reference-Cited by-同舟云学术

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Study of electrical and interfacial properties of CVD-W/p-Si0.83Ge0.17/Si(001)

Published:2000-12 Issue: Volume:377-378 Page:640-645
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Jang Y.C.,Kim K.S.,Shin D.O.,Kim H.J.,Shim K.-H.,Lee N.-E.,Youn S.P.,Roh K.J.,Roh Y.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Silicon-based semiconductor heterostructures: column IV bandgap engineering

2. Silicon-based optoelectronics

3. Electrical properties of the Ti(SiGe)2/Si0.89Ge0.11/Si(001) contact system

4. Schottky barrier heights of W on Si1−xGexalloys

5. Schottky barrier heights on IV-IV compound semiconductors

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Schottky contact properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) heterostructure;Materials Letters;2004-06

2. Solid-phase reaction and Schottky contact properties of Co/n-poly-Si[sub 0.84]Ge[sub 0.16]/n-Si (100);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

3. Formation and Properties of Epitaxial CoSi2Layers on p-Si0.83Ge0.17/p-Si(001) using a Si Capping Layer by Metal-Organic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2003-06-15

4. Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing;Solid-State Electronics;2003-04

5. Rectifying characteristics of sputter-deposited SiGe diodes;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003

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