Experimental and theoretical study of step coverage in metal-organic chemical vapor deposition of tantalum oxide thin films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Tantalum Oxide Thin Films for Dielectric Applications by Low‐Pressure Chemical Vapor Deposition: Physical and Electrical Properties
2. A corrugated capacitor cell (CCC)
3. Micro/Macrocavity Method Applied to the Study of the Step Coverage Formation Mechanism of SiO2 Films by LPCVD
4. Effect of Carrier Gases on the Chemical Vapor Deposition of Tungsten from WF 6 ‐ SiH4
5. Real‐Time, In Situ Monitoring of Room‐Temperature Silicon Surface Cleaning Using Hydrogen and Ammonia Plasmas
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1. Synthesis and Characterization of Tantalum Oxide Deposited By Metal-Organic Chemical Vapour Deposition (MOCVD);IOP Conference Series: Materials Science and Engineering;2018-10-02
2. A review of developments in the preparation methods of tantalum pentoxide film;SPIE Proceedings;2013-08-23
3. Modeling growth rate of HfO2 thin films grown by metal–organic molecular beam epitaxy;Microelectronics Journal;2006-02
4. Low Effective SiO2Thickness and Low Leakage Current Ta2O5Capacitors Based on Tantalum Tetraethoxide Dimethylamino-Ethoxide Precursor;Japanese Journal of Applied Physics;2005-04-08
5. Modeling of the Metalorganic Chemical Vapor Deposition of Tantalum Oxide from Tantalum Ethoxide and Oxygen;Industrial & Engineering Chemistry Research;2005-02-19
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