Modeling of the Metalorganic Chemical Vapor Deposition of Tantalum Oxide from Tantalum Ethoxide and Oxygen
Author:
Affiliation:
1. Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607
Publisher
American Chemical Society (ACS)
Subject
Industrial and Manufacturing Engineering,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/ie049198c
Reference22 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications
3. Thermal Properties of Various Ta Precursors Used in Chemical Vapor Deposition of Tantalum Pentoxide
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3. Low temperature MOCVD of Ta2O5 dielectric thin films from Ta[NC(CH3)3][OC(CH3)3]3 and O2;Journal of the Ceramic Society of Japan;2016
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5. Electrochemical behaviors of tantalum in anhydrous ethanol containing hydrogen sulfate ions;Transactions of Nonferrous Metals Society of China;2011-01
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