The influence of carbon on the surface morphology of Si(100) and on subsequent Ge island formation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Strain-stabilized highly concentrated pseudomorphicSi1−xCxlayers in Si
2. Formation of carbon-induced germanium dots
3. The surface morphology of Si (100) after carbon deposition
4. Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−yCyon Si(001)
5. 2×nsurface structure of SiGe layers deposited on Si(100)
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1. Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky–Krastanov Growth Mechanism;Advances in Semiconductor Nanostructures;2017
2. Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study;Applied Surface Science;2017-01
3. Optimization of Si–C reaction temperature and Ge thickness in C-mediated Ge dot formation;Thin Solid Films;2016-03
4. Formation of Ge dots on Si(100) using reaction of Ge with sub-monolayer carbon on top;Journal of Crystal Growth;2015-09
5. Formation of Ge quantum dots on Si substrate using consecutive deposition of Ge/C and in situ post annealing;Microelectronic Engineering;2014-08
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