Optimization of Si–C reaction temperature and Ge thickness in C-mediated Ge dot formation
Author:
Funder
JSPS KAKENHI
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference19 articles.
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3. Quantum dot solar cells;Nozik;Phys. E.,2002
4. Formation of carbon-induced germanium dots;Schmidt;Appl. Phys. Lett.,1997
5. Room-temperature electroluminescence from Si microdisks with Ge quantum dots;Xia;Opt. Express,2010
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of carbon coverage on Ge quantum dots formation on Si(100) using C-Si reaction and transition of Ge growth mode;Materials Science in Semiconductor Processing;2017-11
2. Formation and Strain Analysis of Stacked Ge Quantum Dots With Strain‐Compensating Si 1− x C x Spacer;physica status solidi c;2017-09-11
3. Control of Growth Modes by Carbon Mediation in Formation of Ge Quantum Dots on Si(100);IEEE Transactions on Nanotechnology;2017-07
4. Effects of Ge growth rate and temperature on C-mediated Ge dot formation on Si (100) substrate;Thin Solid Films;2017-01
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