Highly conducting doped microcrystalline silicon (μc-Si:H) at very low substrate temperature by Cat-CVD

Author:

Dusane R.O,Diehl Frank,Weber U,Schröder B

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Hydrogenated Amorphous Silicon Alloy Deposition Processes;Luft,1993

2. J. Kanicki (Ed.), Amorphous and Micro-crystalline Semiconductor Devices, Artec House, 1991.

3. Valency control of P-type a-SiC:H having the optical band gap more than 2.5 eV by electron-cyclotron resonance CVD (ECR CVD)

4. Proceedings of the 20th IEEE PV Specialists Conference;Yamanaka,1988

5. Optimisation of doped microcrystalline silicon films deposited at very low temperatures by hot-wire CVD

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