Internal stress in Cat-CVD microcrystalline Si:H thin films-Reference-Cited by-同舟云学术

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Internal stress in Cat-CVD microcrystalline Si:H thin films

Published:2006-04 Issue:1-2 Volume:501 Page:117-120
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Sahu Laxmi,Kale Nitin,Kulkarni Nilesh,Pinto R.,Dusane R.O.,Schröder B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Mechanical stresses in low pressure chemically vapour deposited silicon films

2. A new technique for producing large-area as-deposited zero-stress LPCVD polysilicon films: the MultiPoly process

3. Stress in chemically vapour-deposited silicon films

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1. Properties of boron-doped μc-Ge:H films deposited by hot-wire CVD;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2015-06

2. A novel technique for microfabrication of ultra-thin affinity cantilevers for characterization with an AFM;Journal of Micromechanics and Microengineering;2010-11-09

3. Comparison of intrinsic residual stress models in metallic thin films;Scripta Materialia;2009-03

4. An Adhesion Process for Space Solar Cells;The Journal of Adhesion;2007-12-03

5. Deposition of hydrogenated amorphous silicon (a-Si:H) films by hot-wire chemical vapor deposition (HW-CVD) method: Role of substrate temperature;Solar Energy Materials and Solar Cells;2007-05

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