Properties of boron-doped μc-Ge:H films deposited by hot-wire CVD

Author:

Huang Haibin,Shen Honglie,Wu Tianru,Lu Linfeng,Tang Zhengxia,Shen Jiancang

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Reference18 articles.

1. Bitnar B, Durisch W, Mayor J C, et al. Characterisation of Rare Earth Selective Emitters for Ther-mophotovoltaic Applications [J]. Solar Energy Materials & Solar Cells, 2002, 73(3): 221–234

2. Miles R W. Photovoltaic Solar Cells: Choice of Materials and Production Methods [J]. Vacuum, 2006, 80(10): 1 090–1 097

3. Granata J E, Fetzer C, Ermer J H, et al. Ultra Triple Junction GaInP2/GaAs/Ge Solar Cells: Cell Design and Qualification Status [C]. 3rd World Conference on Photovoltaic Energy Conversion, 2003

4. Jordan W B, Wagner S. Effects of Deposition Temperature and Film Thickness on the Structural, Electrical and Optical Properties of Germanium Thin Films[C]. 2002 MRS Spring Meeting. 2002, 715: 509–514

5. Okamoto Y, Makihara K, Higashi S, et al. Formation of Microcrystalline Germanium (μc-Ge:H) Films from Inductively Coupled Plasma CVD [J]. Applied Surface Science. 2005, 244(1–4): 12–15

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