Impact of impedance-dependent receiver gain on the extracted channel thermal noise in sub-100 nm MOSFETs-Reference-Cited by-同舟云学术

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Impact of impedance-dependent receiver gain on the extracted channel thermal noise in sub-100 nm MOSFETs

Published:2013-07 Issue:1-2 Volume:58 Page:355-362
ISSN:0895-7177
Container-title:Mathematical and Computer Modelling
language:en
Short-container-title:Mathematical and Computer Modelling

Author:

Chen Chih-Hung,Lei Peiming,Liang Chia Wen

Funder

National Sciences and Engineering Research Council of Canada (NSERC)

Canada Foundation for Innovation (CFI)

Ontario Innovation Trust (OIT), ON, Canada

Publisher

Elsevier BV

Subject

Computer Science Applications,Modelling and Simulation

Reference32 articles.

1. A new lossy substrate de-embedding method for sub-100 nm RF CMOS noise extraction and modeling;Guo;IEEE Trans. Electron Devices,2006

2. International technology roadmap for semiconductors (ITRS), 2011 [Online]. Available: http://www.itrs.net/reports.html.

3. R.P. Jindal, High frequency noise in fine line NMOS field effect transistors, in: IEDM Tech. Dig., 1985, pp. 68–71.

4. An analytical thermal noise model of deep submicron MOSFETs;Klien;IEEE Electron Device Lett.,1999

5. Channel noise modeling of deep sub-micron MOSFETs;Chen;IEEE Trans. Electron Devices,2002

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