Compact subthreshold current and capacitance modeling of short-channel double-gate MOSFETs

Author:

Monga U.,Børli H.,Fjeldly T.A.

Publisher

Elsevier BV

Subject

Computer Science Applications,Modeling and Simulation

Reference10 articles.

1. The International Technology Roadmap for Semiconductors, 2003. Available: http://public.itrs.net. [Online]

2. Double Gate-MOSFET subthreshold circuit for ultralow power applications;Kim;IEEE Tran. Electron Devices,2004

3. T.A. Fjeldly, S. Kolberg, B. Iniguez, Precise 2D compact modeling of nanoscale DG MOSFETs based on conformal mapping techniques, in: Proc. NSTI-Nanotech 2006, Boston, MA, May 7-11, 2006, vol. 3, pp. 668–673

4. S. Kolberg, Modeling of electrostatics and drain current in nanoscale double-gate MOSFETs, Ph.D. Thesis, Norwegian University of Science and Technology, 2007

5. 2D modeling of nanoscale double gate silicon-on-insulator MOSFETs using conformal mapping;Kolberg;Phys. Scripta,2006

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