1. An MOS transistor model for RF IC design valid in all regions of operation;Enz;IEEE Trans. Microw. Theory Tech.,2002
2. Silicon technology trade offs for radio-frequency/mixed signal;Larson;IEEE Trans. Electron Devices,2003
3. Influence of device engineering on the analog and RF performance of SOI MOSFETs;Kilchytska;IEEE Trans. Electron Devices,2003
4. J.Y. Yang, K. Benaissa, D. Crenshaw, B. Williams, S. Sridhar, J. Ai, G. Boselli, S. Zhao, S.P. Tang, N. Mahalingam, S. Ashburn, P. Madhani, T. Blythe, H. Shichijo, 0.1 mm RFCMOS on high resistivity substrates for system on chip (SoC) application, in: Proceedings of IEDM, December, 2002, pp. 667–670
5. F. Schwand, R.F. Transistors, RF transistors: performance trends versus ITRS targets, in: Proceedings of ICCDCS, 2006, pp.195–200